Deep-Level Luminescence at 1.0 eV in 6H SiC

Deep-Level Luminescence at 1.0 eV in 6H SiC

著者名:

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

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1 国際会議録 As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC Magnusson, B., Ellison, A., Carlsson, F.H.C., Son, N.T., Janzen, E. Trans Tech Publications	7 国際会議録 Defects in High-Purity Semi-Insulating SiC Son, N.T., Magnusson, B., Zolnai, Z., Ellison, A., Janzen, E. Trans Tech Publications
2 国際会議録 Properties of the UD-1 Deep-Level Center in 4H-SiC Magnusson, B., Ellison, A., Janzen, E. Trans Tech Publications	8 国際会議録 HTCVD Grown Semi-Insulating SiC Substrates Ellison, A., Magnusson, B., Son, N.T., Storasta, L., Janzen, E. Trans Tech Publications
3 国際会議録 Properties of the UD-1 Deep-Level Center in 4H-SiC Magnusson, B., Ellison, A., Janzen, E. Trans Tech Publications	9 国際会議録 Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC Son, N.T., Umeda, T., Isoya, J., Gali, A., Bockstedte, M., Magnusson, B., Ellison, A., Morishita, N., Ohshima, T., Itoh, … Trans Tech Publications
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