Selective Doping of 4H-SiC by Aluminum/Boron Co-Diffusion

Selective Doping of 4H-SiC by Aluminum/Boron Co-Diffusion

著者名:

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

5

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

類似資料:

1 国際会議録 Selective Doping of 6H-SiC by Diffusion of Boron Soloviev, S. I., Gao, Y., Khlebnikov, I. I., Sudarshan, T. S. Trans Tech Publications	7 国際会議録 Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC A.V. Bolotnikov, P.G. Muzykov, A. Agarwal, Q.C. Zhang, T.S. Sudarshan Trans Tech Publications
2 国際会議録 Aluminum and Boron Diffusion into (1-100) Face SiC Substrates Soloviev, S.I., Gao, Y., Khlebnikov, Y., Khlebnikov, I.I., Sudarshan, T.S. Trans Tech Publications	8 国際会議録 Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B Maximenko, S., Soloviev, S., Grekov, A., Bolotnikov, A., Gao, Y., Sudarshan, T. S. Trans Tech Publications
3 国際会議録 Aluminum and Boron Diffusion into (1-100) Face SiC Substrates Soloviev, S.I., Gao, Y., Khlebnikov, Y., Khlebnikov, I.I., Sudarshan, T. Trans Tech Publications	9 国際会議録 Electrical Characterization of Ni/Porous SiC/n-SiC Structure Grekov, A., Soloviev, S., Das, T., Sudarshan, T.S. Trans Tech Publications
4 国際会議録 Oxidation of Porous 4H-SiC Substrates Soloviev, S., Das, T., Sudarshan, T.S. Trans Tech Publications	10 国際会議録 Formation of Stacking Faults in Diffused SiC p+/n-/n+ and p+/p-/n+ Diodes Soloviev, S., Cherednichenko, D., Sudarshan, T.S. Trans Tech Publications
5 国際会議録 Oxidation of Porous 4H-SiC Substrates Soloviev, S., Das, T., Sudarshan, T.S. Trans Tech Publications	11 国際会議録 Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs Soloviev, S.I., Sandvik, P., Arthur, S.D., Matocha, K.S., Maximenko, S.I., Sudarshan, T.S. Trans Tech Publications
6 国際会議録 The Effect of Doping Concentration and Conductivity Type on Preferential Etching of 4H-SiC by Molten KOH Gao, Ying, Zhang, Zehong, Bondokov, Robert, Soloviev, Stanislav, Sudarshan, Tangali Materials Research Society	12 国際会議録 Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor H.Z. Song, M.V.S. Chandrashekhar, T.S. Sudarshan Trans Tech Publications

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