Electron Irradiation of 4H SiC by TEM: An Optical Study

Electron Irradiation of 4H SiC by TEM: An Optical Study

著者名:

Sridhara, S.G.

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

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1 国際会議録 Proton Irradiation Induced Defects in 4H-SiC Storasta, L., Carlsson, F.H.C., Sridhara, S.G., Aberg, D., Bergman, J.P., Hallen, A., Janzen, E. Trans Tech Publications	7 国際会議録 Characterisation and Defects in Silicon Carbide Bergman, J.P., Jakobsson, H., Storasta, L., Carlsson, F.H.C., Magnusson, B., Sridhara, S., Pozina, G., Lendenmann, H., … Trans Tech Publications
2 国際会議録 Dll PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC Carlsson, F.H.C., Sridhara, S.G., Hallen, A., Bergman, J.P., Janzen, E. Trans Tech Publications	8 国際会議録 Time Resolved PL Study of Multi Bound Excitons in 3C SiC Bergman,J.P., Janzen,E., Sridhara,S.G., Choyke,W.J. Trans Tech Publications
3 国際会議録 Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC Sridhara, S.G., Carlsson, F.H.C., Bergman, J.P., Henry, A., Janzen, E. Trans Tech Publications	9 国際会議録 Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in … Gali, A., Deak, P., Rauls, E., Ordejon, P., Carlsson, F.H.C., Ivanov, I.G., Son, N.T., Janzen, E., Choyke, W.J. Trans Tech Publications
4 国際会議録 Neutron Irradiation of 4H SiC Carlsson, F.H.C., Storasta, L., Magnusson, B., Bergman, J.P., Skoeld, K., Janzen, E. Trans Tech Publications	10 国際会議録 Recombination Enhanced Defect Annealing in 4H-SiC Storasta, L., Carlsson, F. H. C., Bergman, J. P., Janzen, E. Trans Tech Publications
5 国際会議録 Characterisation and Defects in Silicon Carbide Bergman, J.P., Jakobsson, H., Storasta, L., Carlsson, F.H.C., Magnusson, B., Sridhara, S.G., Pozina, G., Lendenmann, H., … Trans Tech Publications	11 国際会議録 A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC W. Sullivan, J.W. Steeds Trans Tech Publications
6 国際会議録 Electroluminescence from 4H-SiC Schottky Diodes Carlsson, F.H.C., ul-Wahab, Q., Bergman, P.J., Janzen, E. Materials Research Society	12 国際会議録 The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC J.W. Steeds Trans Tech Publications

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