Impurity Activation in N+ Ion-Implanted 6H-SiC with Pulsed Laser Annealing Method

Impurity Activation in N+ Ion-Implanted 6H-SiC with Pulsed Laser Annealing Method

著者名:

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

類似資料:

1 国際会議録 Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC Ohshima, T., Uedono, A., Eryu, O., Lee, K.K., Abe, K., Itoh, H., Nakashima, K. Trans Tech Publications	7 国際会議録 Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces Abe, K., Sumitomo, M., Sumi, T., Eryu, O., Nakashima, K. Trans Tech Publications
2 国際会議録 Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide Hishida, Y., Watanabe, M., Nakashima, K., Eryu, O. Trans Tech Publications	8 国際会議録 Formation of Tungsten Ohmic Coutact on n-Type 6H-SiC by Pulsed Laser Processes Nakashima,K., Eryu,O., Kurne,T., Nakata,T., Inoue,M. Trans Tech Publications
3 国際会議録 Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC Eryu, O., Matsuo, D., Abe, K., Nakashima, K. Trans Tech Publications	9 国際会議録 Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions Ohshima, T., Uedono, A., Itoh, H., Yoshikawa, M., Kojima, K., Okada, S., Nashiyama, I., Abe, K., Tanigawa, S., Frank, … Trans Tech Publications
4 国際会議録 Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11-20), (1-100), and (0001) Oriented 6H-SiC Eryu, O., Matsuo, D., Abe, K., Nakashima, K. Trans Tech Publications	10 国際会議録 Hot-Implantation of Phosphorus Ions into 6H-SiC Abe,K., Ohshima,T., Itoh,H., Aoki,Y., Yoshikawa,M., Nashiyama,I., Iwami,M. Trans Tech Publications
5 国際会議録 Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing Nakashima, K., Eryu, O., Ukai, S., Yoshida, K., Watanabe, M. Trans Tech Publications	11 国際会議録 A New Type of SiC Gas Sensor with a pn-Junction Structure Nakashima, K., Okuyama, Y., Ando, S., Eryu, O., Abe, K., Yokoi, H., Oshima, T. Trans Tech Publications
6 国際会議録 Effects of Surface Treatments of 6H-SiC upon Metal-SiC Interfaces Abe, K., Sumitomo, M., Sumi, T., Eryu, O., Nakashima, K. Trans Tech Publications	12 国際会議録 A New Type of SiC Gas Sensor with a pn-Junction Structure Nakashima, K., Okuyama, Y., Ando, S., Eryu, O., Abe, K., Yokoi, H., Oshima, T. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12