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Quality of Thermally Grown Oxides in 4H-SiC Over Nitrogen or Phosphorus Implanted Regions

著者名:
掲載資料名:
Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
640
発行年:
2001
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995505 [1558995501]
言語:
英語
請求記号:
M23500/640
資料種別:
国際会議録

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