Dislocation Content of Etch Pits in Hexagonal Silicon Carbide | 東京工業大学附属図書館文献データベース

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Dislocation Content of Etch Pits in Hexagonal Silicon Carbide

著者名:

Khlebnikov, Igor I.

Lari, Mohsen B.

Khlebnikov, Yuri I.

Bondokov, Robert T.

Ayyagari, Ramakrishna

Sudarshan, Tangali S.

さらに 4 件

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

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1 国際会議録 Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers Chandler, T. C. Jr., Lari, M. B., Sudarshan, T. S. Trans Tech Publications	7 国際会議録 Characterization of Silicon Carbide using Raman Spectroscopy Burton, J. C., Long, F. H., Khlebnikov, Y., Khlebnikov, I., Parker, M., Sudarshan, T. S. Trans Tech Publications
2 国際会議録 One of Many Sources of Defect Generation in SiC Khlebnikov, Igor I., Khlebnikov, Yuri I., Wood, Colin, Sudarshan, Tangali S. Materials Research Society	8 国際会議録 (138d) Embedded Sphere Method for Measuring Dielectric Breakdown in Polymers and Polymer Composites Shiva Balasubramanian, Peter A. Barber, Peter Muzykov, Hans-Conrad zur Loye, Tangali Sudarshan American Institute of Chemical Engineers
3 国際会議録 Point and Planar Defect Formation in SiC During PVT Growth Drachev, Roman V., Khlebnikov, Yuri I., Rhodes, Curtis A., Cherednichenko, Dmitry I., Khlebnikov, Igor I., Sudarshan, … Materials Research Society	9 国際会議録 Imaging of Micropipes in Silicon Carbide Under High Field Stress Gradinaru, G., Helmi, M., Khlebnikov, Y., Korony, G., Mitchel, W. C., Sudarshan, T. S. MRS - Materials Research Society
4 国際会議録 Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes Khlebnikov, I. I., Cherednichenko, D. I., Khlebnikov, Y., Sudarshan, T. S. Trans Tech Publications	10 国際会議録 Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via PhySiCal Vapor Transport (PVT) Basceri, C., Khlebnikov, I., Khlebnikov, Y., Muzykov, P., Sharma, M., Stratiy, G., Silan, M., Balkas, C.M. Trans Tech Publications
5 国際会議録 Homoepitaxial Growth on 4H-SiC Substrates by Chemical Vapor Deposition Christer Hallin, Igor Khlebnikov, Yuri Khlebnikov, Peter Muzykov, Elif Berkman, Monica Sharma, George Stratiy, Murat … Materials Research Society	11 国際会議録 Intrinsic Defects in High Purity Semi-Insulating 6H SiC D. V. Savchenko, E. N. Kalabukhova, S. N. Lukin, Tangali S. Sudarshan, Yuri I. Khlebnikov, William C. Mitchel, S. … Materials Research Society
6 国際会議録 The Effect of Doping Concentration and Conductivity Type on Preferential Etching of 4H-SiC by Molten KOH Gao, Ying, Zhang, Zehong, Bondokov, Robert, Soloviev, Stanislav, Sudarshan, Tangali Materials Research Society	12 国際会議録 SiC Epitaxial Growth on Carbon Khlebnikov, I., Madangarli, V., Sudarshan, T. S. MRS - Materials Research Society

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