Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide | 東京工業大学附属図書館文献データベース

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Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide

著者名:

Pantelides, S.T.

さらに 7 件

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

類似資料:

1 国際会議録 Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications	7 国際会議録 The Effects Of Post-Oxidation Anneal Conditions On Interface State Density Near The Conduction Band Edge And Inversion Channel Mobility For SiC MOSFETs Chung, Gilyong, Tin, Chin-Che, Williams, John Robert, McDonald, Kyle, DiVentra, M., Pantelides, S.T., Feldman, Len C., … Materials Research Society
2 国際会議録 Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications	8 国際会議録 Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface Dhar, S., Wang, S.R., Ahyi, A.C., Isaacs-Smith, T., Pantelides, S.T., Williams, J.R., Feldman, L.C. Trans Tech Publications
3 国際会議録 Nitrogen Content and Interface Trap Reduction in SiO2/4H-SiC McDonald, K., Weller, R.A., Pantelides, S.T., Feldman, L.C., Chung, G.Y, Tin, C.C., Williams, J.R. Electrochemical Society	9 国際会議録 High-Current, NO-Annealed Lateral 4H-SiC MOSFETs Das, M.K., Chung, G.Y., Williams, J.R., Saks, N.S., Lipkin, L.A., Palmour, J.W. Trans Tech Publications
4 国際会議録 Bonding, Defects, and Defect Dynamics in the SiC-SiO2 System Pantelides, S.T., Buczko, R., Ventra, M. Di, Wang, S., Kim, S.-G., Pennycook, S.J., Duscher, G., Feldman, L.C., … Materials Research Society	10 国際会議録 High-Current, NO-Annealed Lateral 4H-SiC MOSFETs Das, M.K., Chung, G.Y., Williams, J.R., Saks, N.S., Lipkin, L.A., Palmour, J.W. Trans Tech Publications
5 国際会議録 Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities Lu, C.-Y., Cooper, J.A., Jr., Chung, G.Y., Williams, J.R., McDonald, K., Feldman, L.C. Trans Tech Publications	11 国際会議録 Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs - Challenges and Advances Pantelides, S.T., Wang, S., Franceschetti, A., Buczko, R., Di Ventra, M., Rashkeev, S.N., Tsetseris, L., Evans, M.H., … Trans Tech Publications
6 国際会議録 Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities Lu, C.-Y., Cooper, J.A., Jr., Chung, G.Y., Williams, J.R., McDonald, K., Feldman, L.C. Trans Tech Publications	12 国際会議録 Atomic-Scale Engineering of the SiC-SiO2 Interface Pantelides, S. T., Duscher, G., Ventra, M. Di, Buczko, R., McDonald, K., Huang, M. B., Weller, R. A., Baumvol, I., … Trans Tech Publications

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