Growth of Thick 4H-SiC Epilayers in a Vertical Radiant-Heating Reactor

Growth of Thick 4H-SiC Epilayers in a Vertical Radiant-Heating Reactor

著者名:

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

類似資料:

1 国際会議録 Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	7 国際会議録 4H-SiC Epitaxial Growth for High-Power Devices Tsuchida, H., Kamata, I., Jikimoto, T., Miyanagi, T., Izumi, K. Trans Tech Publications
2 国際会議録 Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	8 国際会議録 Conditions for Micropipe Dissociation by 4H-SiC CVD Growth Kamata, I., Tsuchida, H., Jikimoto, T., Miyanagi, T., Izumi, K. Trans Tech Publications
3 国際会議録 Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations Kamata, I., Tsuchida, H., Jikimoto, T., Izumi, K. Trans Tech Publications	9 国際会議録 In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces Jikimoto, T., Tsuchida, H., Kamata, I., Izumi, K. Trans Tech Publications
4 国際会議録 A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes Kamata, I., Tsuchida, H., Jikimoto, T., Izumi, K. Trans Tech Publications	10 国際会議録 In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces Jikimoto, T., Tsuchida, H., Kamata, I., Izumi, K. Trans Tech Publications
5 国際会議録 A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes Kamata, I., Tsuchida, H., Jikimoto, T., Izumi, K. Trans Tech Publications	11 国際会議録 Homoepitaxial Growth and Characterization of Thick SiC Layers With a Reduced Micropipe Density Tsuchida, H., Kamata, I., Izumi, S., Tawara, T., Jikimoto, T., Miyanagi, T., Nakamura, T., Izumi, K. Materials Research Society
6 国際会議録 LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	12 国際会議録 Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers Tawara, T., Tsuchida, H., Izumi, S., Kamata, I., Izumi, K. Trans Tech Publications

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