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Growth and Characterization of 4H-SiC MESFET Structures Grown by Hot-Wall CVD

著者名:
Forsberg, U.
Henry, A.
Danielsson, Oe.
Rorsman, N.
Eriksson, J.
Wahab, Q.
Storasta, L.
Linnarsson, M.K.
Janzen, E.
さらに 4 件
掲載資料名:
Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
640
発行年:
2001
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995505 [1558995501]
言語:
英語
請求記号:
M23500/640
資料種別:
国際会議録

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