Defect Energetics in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers With Reduced Micropipe Density | 東京工業大学附属図書館文献データベース

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Defect Energetics in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers With Reduced Micropipe Density

著者名:

Syvaejaervi, M.

Kakanakova-Georgieva, A.

さらに 3 件

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

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1 国際会議録 Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers Yakimova, R., Jacobson, H., Syvaejaervi, M., Kakanakova-Georgieva, A., Iakimov, T., Virojanadara, C., Johansson, L.I., … Trans Tech Publications	7 国際会議録 Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques Kakanakova-Georgieva, A., Yakimova, R., Zhang, J., Storasta, L., Syvaejaervi, M., Janzen, E. Trans Tech Publications
2 国際会議録 The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique Kakanakova-Georgieva,A., MacMillan,M.F., Nishino,S., Yakimova,R., Janzen,E. Trans Tech Publications	8 国際会議録 Influence of Gravity on Defect Formation in Homoepitaxial Layers of SiC Grown by Sublimation Yakimova, R., Syvaejaervi, M., Janzen, E., Dedulle, J.-M., Pons, M. ESA Publications Division
3 国際会議録 High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers Jacobsson, Henrik, Yakimova, R., Syvaejaervi, M., Birch, J., Tuomi, T., Janzen, E. Trans Tech Publications	9 国際会議録 Polytype stability and defect reduction in 4H-SiC crystals grown via sublimation technique Yakimova, R., Iakimov, T., Syvajarvi, M., Jacobsson, H., Raback, P., Vehanen, A., Janzen, E. MRS-Materials Research Society
4 国際会議録 Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density Syrkin, A., Dmitriev, V., Yakimova, R., Henry, A., Janzen, E. Trans Tech Publications	10 国際会議録 Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers Yakimova, R., Jacobson, H., Syvajarvi, M., Kakanakova-Georgieva, A., Iakimov, T., Virojanadara, C., Johansson, L.I., … Trans Tech Publications
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6 国際会議録 Domain Occurrence in SiC Epitaxial Layers Grown by Sublimation Tuominen,M., Yakimova,R., Kakanakova-Georgieva,A., MacMillan,M.F., Syvajarvi,M., Janzen,E. Trans Tech Publications	12 国際会議録 Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC Kassamakova, L., Kakanakov, R., Yakimova, R., Kakanakova-Georgieva, A., Syvaejaervi, M., Wilzen, L., Janzen, E. Trans Tech Publications

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