Investigation of Silicon Carbide Physical Vapor Transport Growth on the C-Terminated Face of 6H Seeds

Investigation of Silicon Carbide Physical Vapor Transport Growth on the C-Terminated Face of 6H Seeds

著者名:

Schulz, D.

掲載資料名:

Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

640

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995505 [1558995501]

言語:

英語

請求記号:

M23500/640

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014527
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide-materials
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.11.29

類似資料:

1 国際会議録 Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport Rost, H.-J., Irmscher, K., Doerschel, J., Siche, D., Schulz, D., Wollweber, J. Trans Tech Publications	7 国際会議録 Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes Rost, H.-J., Doerschel, J., Schulz, D., Siche, D., Wollweber, J. Trans Tech Publications
2 国際会議録 Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals Rost, H.-J., Dolle, J., Doerschel, J., Siche, D., Schulz, D., Wollweber, J. Trans Tech Publications	8 国際会議録 Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes Rost, H.-J., Doerschel, J., Schulz, D., Siche, D., Wollweber, J. Trans Tech Publications
3 国際会議録 Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT Schulz, D., Irmscher, K., Dolle, J., Eiserbeck, W., Muller, T., Rost, H. -J., Siche, D., Wagner, G., Wollweber, J. Trans Tech Publications	9 国際会議録 Source Material Related Distribution of Defects in 6H-SiC Single Crystals Rost, H.-J, Siche, D., Dolle, J., Schulz, D., Wollweber, J. Trans Tech Publications
4 国際会議録 Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC Siche, D., Albrecht, M., Doerschel, J., Irmscher, K., Rost, H. J., Rossberg, M., Schulz, D. Trans Tech Publications	10 国際会議録 Morphology of Sublimation Grown 6H-SiC(000-1) Surfaces Schulz, D., Dolle, J., Rost, H.-J, Siche, D., Wollweber, J. Trans Tech Publications
5 国際会議録 Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals Wollweber, J., Rost, H.-J., Schulz, D., Siche, D. Trans Tech Publications	11 国際会議録 On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates Schulz, D., Lechner, M., Rost, H.-J., Siche, D., Wollweber, J. Trans Tech Publications
6 国際会議録 Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals Wollweber, J., Rost, H.-J., Schulz, D., Siche, D. Trans Tech Publications	12 国際会議録 The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals Rost, H.J., Schmidbauer, M., Siche, D. Trans Tech Publications

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