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High-Frequency Capacitance-Voltage Characteristics of PECVD-Grown SiO2 MIS Structure on GaN and GaN/Al0.4Ga0.6N/GaN Heterostructure

著者名:
Chen, P.
Zhou, Y.G.
Bu, H.M.
Li, W.P.
Chen, Z.Z.
Shen, B.
Zhang, R.
Zheng, Y.D.
さらに 3 件
掲載資料名:
GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
639
発行年:
2001
総ページ数:
4
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995499 [1558995498]
言語:
英語
請求記号:
M23500/639
資料種別:
国際会議録

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