Blank Cover Image

High Electron Mobility in Free-Standing GaN Substrates

著者名:
Saxler, A.
Look, D. C.
Elhamri, S.
Sizelove, J.
Cull, D.
Mitchel, W.C.
Callahan, M.
Bliss, D.
Bouthillette, L.
Wang, Sheng-Qi
Sung, C. M.
Park, S. S.
Lee, K.Y.
さらに 8 件
掲載資料名:
GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
639
発行年:
2001
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995499 [1558995498]
言語:
英語
請求記号:
M23500/639
資料種別:
国際会議録

類似資料:

1 国際会議録 Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure

Elhamri, S., Saxler, A., Cull, D., Mitchel, W.C., Elsass, C.R., Smorchkova, I. P., Heying, B., Poblenz, C., Fini, P., …

Materials Research Society
7 国際会議録 Deep Level near Ec - 0.55 eV in Undoped 4H-SiC Substrates

Mitchel, W.C., Mitchell, W.D., Smith, S.R., Landis, G., Evwaraye, A.O., Fang, Z.Q., Look, D.C., Sizelove, J.R.

Trans Tech Publications
2 国際会議録 Growth of GaN Crystals Under Ammonothermal Conditions

Callahan, Michael J., Wang, Buguo, Bouthillette, Lionel O., Wang, Sheng-Qi, Kolis, Joseph W., Bliss, David F.

Materials Research Society
8 国際会議録 GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates

Irokawa, Y., Luo, B., Kim, Jihyun, Kang, B.S., LaRoche, J.R., Ren, F, Pan, C.-C., Chen, G.T., Chyi, J.-I., Park, S.S., …

Electrochemical Society
3 国際会議録 Graphene Growth on SiC and Other Substrates Using Carbon Sources

W.C. Mitchel, J.H. Park, Howard E. Smith, L. Grazulis, S. Mou, D. Tomich, K. Eyink, Said Elhamri

Materials Research Society
9 国際会議録 High-Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates

Saxler, A., Capano, M. A., Mitchel, W. C., Kung, P., Zhang, X., Walker, D., Razeghi, M.

MRS - Materials Research Society
4 国際会議録 Electrical transport of an AlGaN/GaN two-dimensional electron gas

Saxler, A., Debray, P., Perrin, R., Elhamri, S., Mitchel, W. C., Elsass, C. R., Smorckkova, I. P., Heying, B., Haus, E., …

MRS-Materials Research Society
10 国際会議録 DC Characteristics of AIGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates

Irokawa, Y., Luo, B., Ren, F., Pan, C-C., Chen, G.-T., Chyi, J.I., Park, S.S., Park, Y.J., Pearton, S.J.

Electrochemical Society
5 国際会議録 MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures

Redwing, J. M., Flynn, J. S., Tischler, M. A., Mitchel, W., Saxler, A.

MRS - Materials Research Society
11 国際会議録 Vanadium-free Semi-insulating 4H-SiC Substrates

Mitchel, W. C., Saxler, A., Perrin, R., Goldstein, J., Smith, S. R., Evwaraye, A. O., Solomon, J. S., Brady, M., …

Trans Tech Publications
6 国際会議録 GaN grown using trimethylgallium and triethylgallium

Saxler,A., Kung,P., Zhang,X., Walker,D., Solomon,J., Mitchel,W.C., Razeghi,M.

Trans Tech Publications
12 国際会議録 Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

Capano, M. A., Cooper, J. A. Jr., Melloch, M. R., Saxler, A., Mitchel, W. C.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12