Approaches for Reduction of the Defect Density in Group III Nitride Based Heterostructures

Approaches for Reduction of the Defect Density in Group III Nitride Based Heterostructures

著者名:

Zheleva, T. S.

掲載資料名:

GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

639

発行年:

2001

総ページ数:

13

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995499 [1558995498]

言語:

英語

請求記号:

M23500/639

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014526
シリーズID:	PA00000011
会議名:	Symposium on gan and related alloys
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.12.01

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2 国際会議録 Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC K.A. Jones, M.C. Wood, T.S. Zheleva, K.W. Kirchner, M.A. Derenge, A. Bolonikov, T.S. Sudarshan, R.D. Vispute, S.S. … Trans Tech Publications	8 国際会議録 Solid phase epitaxial recrystallization of AlN films on sapphire (0001): A novel substrate approach for GaN epitaxy Vispute, R. D., Patel, A., Sharma, R. P., Venkatesan, T., Zheleva, T., Jones, K. A. MRS-Materials Research Society
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