Blank Cover Image

The Effect of Buffer Layers in MOCVD Growth of GaN Film on 3C-SiC/Si Substrate

著者名:
Park, C. I.
Kang, J. H.
Kim, K. C.
Lim, K. Y.
Suh, E.-K.
Nahm, K. S.
さらに 1 件
掲載資料名:
GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
639
発行年:
2001
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558995499 [1558995498]
言語:
英語
請求記号:
M23500/639
資料種別:
国際会議録

類似資料:

1 国際会議録 Growth and characterization of GaN thin films on Si(111) substrates using SiC intermediate layer

Lim, K. Y., Lee, K. J., Park, C. I., Kim, K. C., Choi, S. C., Lee, W-H., Suh, E-K., Yang, G. M., Nahm, K. S.

MRS-Materials Research Society
7 国際会議録 Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111)Substrates

Shim,H.W., Kim,K.C., Seo,Y.H., Nahm,K.S., Suh,E.-K., Lee,H.J., Hwang,Y.G.

Trans Tech Publications
2 国際会議録 The Growth and Characterization of 3C-SiC/SiNx/Si Structure

Kim, K. C., Park, C. I., Nahm, K. S., Suh, E. -K.

Trans Tech Publications
8 国際会議録 GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation

H.H. Hwang, J.K. Kim, J.M. Choi, W.J. Lee, I.S. Kim

Trans Tech Publications
3 国際会議録 Epitaxial Growth of Void-Free 3C-SiC Thin Film on Si Substrate

Seo, Y.H., Nahm, K.S., Suh, F.K., Lee, H.J., Kim, D., Lee, B.

Electrochemical Society
9 国際会議録 Atomic Force Microscopy Study of GaN-Buffer Layers on SiC(0001) by MOCVD

Lim, Dongsup, Byun, Dongjin, Kim, Gyeungho, Nam, Ok-Hyun, Choi, In-Hoon, Park, Dalkeun, Kum, Dong-Wha

MRS - Materials Research Society
4 国際会議録 The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film in Si Substrate

Se,Y.H., Kim,K.C., Shim,H.W., Nahm,K.S., Suh,E.-K., Lee,H.J., Hwang,Y.C., Kim,D.-K., Lee,B.-T.

Trans Tech Publications
10 国際会議録 Effects of buffer layer growth conditions on the GaN epilayer quality by MOCVD

Juang,F.-S., Su,Y.K., Chang,S.-J., Chu,T.K., Chen,C.S., Chi,L.W., Lam,K.T.

SPIE - The International Society for Optical Engineering
5 国際会議録 The Formation Mechanism of SiC/Si Interface in the Growth of SiC Films on Si

Nahm, K.S., Kim, K C., Park, C.I., Roh, J.I.

Electrochemical Society
11 国際会議録 OPC in memory-device patterns using boundary layer model for 3-dimensional mask topographic effect

Y. Kim, I. Kim, J. Park, S. Kim, S. Suh, Y. Cheon, S. Lee, J. Lee, C. Kang, J. Moon, J. Cobb

SPIE - The International Society of Optical Engineering
6 国際会議録 GaN Growth on Si Using ZnO Buffer Layer

Kim, K. C., Kang, S. W., Kryliouk, O., Anderson, T. J., Craciun, D., Craciun, V., Singh, R. K.

Materials Research Society
12 国際会議録 GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates

Irokawa, Y., Luo, B., Kim, Jihyun, Kang, B.S., LaRoche, J.R., Ren, F, Pan, C.-C., Chen, G.T., Chyi, J.-I., Park, S.S., …

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12