Microstructure of GaN Grown on (1120) Sapphire

Microstructure of GaN Grown on (1120) Sapphire

著者名:

Ruterana, P.

掲載資料名:

GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

639

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995499 [1558995498]

言語:

英語

請求記号:

M23500/639

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014526
シリーズID:	PA00000011
会議名:	Symposium on gan and related alloys
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.12.01

類似資料:

1 国際会議録 The Microstructure of GaN Nucleation Layers Grown by MOCVD on (1120)Sapphire Versus Pressure and Temperature Wojtowicz, T., Ruterana, P., Twigg, M.E., Henry, R.L., Koleske, D.D., Wickenden, A.E. Materials Research Society	7 国際会議録 High-Resolution X-ray Diffraction and X-ray Topography Study of GaN on Al2O3 Chaudhuri, J., Ng, M. Hooe, Koleske, D. D., Wickenden, A. E., Henry, R. L. MRS - Materials Research Society
2 国際会議録 Effect of Growth Temperature on the Microstructure of the Nucleation Layers of GaN Grown by MOCVD on (1120) Sapphire Wojtowicz, T., Ruterana, P., Twigg, M.E., Henry, R.L., Koleske, D.D., Wickenden, A.E. Materials Research Society	8 国際会議録 Current-voltage characteristics of ungated AlGaN/GaN heterostructures Albrecht, J. D., Ruden, P. P., Binari, S. C., Ikossi-Anastasiou, K., Ancona, M. G., Henry, R. L., Koleske, D. D., … MRS-Materials Research Society
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6 国際会議録 On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on Sapphire Wickenden, A. E., Gaskill, D. K., Koleske, D. D., Doverspike, K., Simons, D. S., Chi, P. H. MRS - Materials Research Society	12 国際会議録 Activation of Mg Acceptors in GaN:Mg Monitored by Electron Paramagnetic Resonance Spectroscopy Matlock, D., Zvanut, M.E., DiMaio, Jeffrey R., Davis, R.F., Henry, R.L., Koleske, Daniel, Wickenden, Alma Materials Research Society

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