Optimization of the GaN Epilayer Quality Using In-Situ Reflectance Measurements

Optimization of the GaN Epilayer Quality Using In-Situ Reflectance Measurements

著者名:

Ruffenach-Clur, Sandra

掲載資料名:

GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

639

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995499 [1558995498]

言語:

英語

請求記号:

M23500/639

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014526
シリーズID:	PA00000011
会議名:	Symposium on gan and related alloys
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.12.01

類似資料:

1 国際会議録 Investigation of GaN Epilayers Growth Mechanisms Using In Situ Reflectance in MOCVD Moret, Matthieu, Briot, Olivier, Ruffenach-Clur, Sandra, Aulombard, Roger-Louis Materials Research Society	7 国際会議録 Optical Anisotropy of the Optical Response for Strained GaN Epilayers Grown Along the <10-10> Direction Andenet, A., Gil, B., Vaillant, Y-M. Le, Clur, S., Briot, O., Aulombard, R. L. MRS - Materials Research Society
2 国際会議録 X-Ray Reciprocal Space Mapping Studies of Strained GaN/AlGaN Quantum Wells Briot, Olivier, Ruffenach-Clur, Sandra, Moret, Matthieu, Aulombard, Roger-Louis Materials Research Society	8 国際会議録 Optimization of the Carbonized Buffer Layer for the Growth of High Quality Single Crystal SiC on Si Cloitre, T., Moreaud, N., Vicente, P., Sadowski, M., Moret, M., Aulombard, R.L. Materials Research Society
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4 国際会議録 High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications Moret, M., Ruffenach, S., Briot, O., Gil, B., Aulombard, R. L. Materials Research Society	10 国際会議録 Mechanisms of Raman Scattering in doped Indium Nitride Pinquier, Claire, Demangeot, Francois, Frandon, Jean, Gaio, Miguel, Briot, Olivier, Maleyre, Benedicte, Clur-Ruffenach, … Materials Research Society
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