A New Mechanism in the Growth Process of GaN by HVPE

A New Mechanism in the Growth Process of GaN by HVPE

著者名:

掲載資料名:

GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

639

発行年:

2001

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558995499 [1558995498]

言語:

英語

請求記号:

M23500/639

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014526
シリーズID:	PA00000011
会議名:	Symposium on gan and related alloys
回次:	2000
会議開催地:	Boston, MA, USA
会議開催年:	2000.11.27-2000.12.01

類似資料:

1 国際会議録 Microscopic emission properties of nonpolar a-plane GaN grown by HVPE (Invited Paper) [6121-05] Paskova, T., Kroeger, R., Paskov, P.P., Figge, S., Hommel, D., Monemar, B., Haskell, B., Fini, P., Speck, J.S., … SPIE - The International Society of Optical Engineering	7 国際会議録 Polarization-Dependent Spectroscopy of the Near-Bandgap Excitonic Emission in Free Standing GaN Paskov, P.P., Paskova, T., Holtz, P.O., Monemar, B. Materials Research Society
2 国際会議録 Hydride vapour phase homoepitaxial growth of GaN on MOCVD-Grown 'Templates' Paskova, T., Tungasmita, S., Valcheva, E., Svedberg, E. B., Arnaudov, B., Evtimova, S., Persson, P. A., Henry, A., … MRS-Materials Research Society	8 国際会議録 The Growth of GaN Films on Si Substrates by HVPE Yu, H., Chen, L., Zhang, R., Xiu, X., Xie, Z., Ye, Y., Gu, S., Shen, B., Shi, Y., Zheng, Y. Trans Tech Publications
3 国際会議録 High Pressure Annealing of HVPE GaN Free-Standing Films: Redistribution of Defects and Stress Paskova, T., Suski, T., Bockowski, M., Paskov, P. P., Darakchieva, V., Monemar, B., Tuomisto, F., Saarinen, K., … Materials Research Society	9 国際会議録 Photoluminescence study of near-surface GaN/AlN superlattices P. P. Paskov, B. Monemar, T. Paskova, S. Kamiyama, H. Amano Society of Photo-optical Instrumentation Engineers
4 国際会議録 Curvature and Strain in Thick HVPE-GaN for Quasi-Substrate Applications Roder, Claudia, Bottcher, Tim, Paskova, Tanya, Monemar, Bo, Hommel, Detlef Materials Research Society	10 国際会議録 The role of anisotropy for defect properties in a-plane GaN R. Kröger, T. Paskova Society of Photo-optical Instrumentation Engineers
5 国際会議録 Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy Paskova, T., Svedberg, E. B., Madsen, L. D., Yakimova, R., Ivanov, I. G., Henry, A., Monemar, B. MRS - Materials Research Society	11 国際会議録 Strain Evolution and Phonons in AlN/GaN Superlattices Darakchieva, V., Paskov, P.P., Schubert, M., Valcheva, B., Paskova, T., Arwin, H., Monemar, B., Amano, H., Akasaki, I. Materials Research Society
6 国際会議録 Formation and Dissociation of Hydrogen-Related Defect Centers in Mg-Doped GaN Gelhausen, O., Phillips, M.R, Goldys, E.M., Paskova, T., Monemar, B., Strassburg, M., Hoffmann, A. Materials Research Society	12 国際会議録 Growth by Vacuum Evaporation, Sputtering, Molecular Beam Epitaxy and Chemical Vapor Deposition CADORET R. D. Reidel

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