Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy

Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy

著者名:

Barabash, R. I.

掲載資料名:

Thin films : stresses and mechanical properties XI : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

875

発行年:

2005

開始ページ:

115

終了ページ:

120

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998292 [1558998292]

言語:

英語

請求記号:

M23500/875

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014514
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2005
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2005.03.28-2005.04.01

類似資料:

1 国際会議録 Surface Instability and Associated Roughness of Pendeo-epitaxy GaN (0001) Films Grown via Metalorganic Vapor Phase Epitaxy Roskowski, Amy M., Miraglia, Peter Q., Preble, Edward A., Einfeldt, Sven, Davis, Robert F. Materials Research Society	7 国際会議録 Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Davis, R. F. MRS - Materials Research Society
2 国際会議録 Study of the Origin of Misorientation in GaN Grown by Pendeo-Epitaxy Zakharov, D.N., Liliental-Weber, Z., Roskowski, A.M., Einfeldt, S., Davis, R.F. Materials Research Society	8 国際会議録 Helical-Type Surface Defects in GaN and InGaN Thin Films Epitaxially Grown on GaN Templates at Reduced Temperatures Miraglia, Peter, Preble, Edward, Roskowski, Amy, Einfeldt, Sven, Davis, Robert F., Lim, Sung Hwam, Liliental-Weber, … Materials Research Society
3 国際会議録 Compositional Fluctuations in AlxGa1-xN Layers Grown on 6H-SiC (0001) by Metal Organic Vapor Phase Epitaxy Kroger, R., Einfeldt, S., Reitmeier, Z.J., Chierchia, R., Ryder, P., Hommel, D., Davis, R.F. Materials Research Society	9 国際会議録 *Pendeo-epitaxial growth and characterization of GaN and related materials on 6H-SiC(0001) and Si(111) substrates Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., Mehregany, M. MRS-Materials Research Society
4 国際会議録 Removal of 6H-SiC Substrate Influence When Evaluating GaN Thin Film Properties via X-ray Preble, Edward A., Miraglia, Peter Q., Roskowski, Amy M., Einfeldt, Sven, Davis, Robert F. Materials Research Society	10 国際会議録 Transmission Electron Microscopy Study of Nonpolar a-Plane GaN Grown by Pendeo-Epitaxy on (1120) 4H-SiC Zakharov, D.N., Liliental-Weber, Z., Wagner, B., Reitmeier, Z.J., Preble, E.A., Davis, R.F. Materials Research Society
5 国際会議録 Spatially Resolved Characterization of Plastic Deformation Induced by Focused-Ion Beam Processing in Structured InGaN/GaN Layers R. Barabash, G. Ice, R. Kroger, H. Lohmeyer, K. Sebald, J. Gutowski, I. Bottcher, D. Hommel, W. Liu, J.-S. Chung Materials Research Society	11 国際会議録 Microdiffraction Experiments and Modeling for Analyzing Multiscale Dislocation Ensembles in Materials Ice, G. E., Barabash, R. I., Pang, J. Materials Research Society
6 国際会議録 Growth and Characterization of GaN and AlxGa1-xN Thin Films Achieved Via Lateral- and /or Pendeo-Epitaxial Overgrowth on 6H-SiC(0001) Substrates Davis, R. F., Nam, O-H., Zheleva, T. S., Bremser, M. D., Linthicum, K. J., Gehrke, T., Rajagopal, P., Thomson, D. B., … MRS - Materials Research Society	12 国際会議録 Superior Structural Quality of Newly Developed GaN Pendeo-Epitaxial Layers Liliental-Weber, Z., Jasinski, J., Cherns, D., Baines, M., Davis, R. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12