A Silicon Nitride Based Shallow Trench Isolation with Side-Gate for CMOS Integration with MEMS Components for System-On-Chip Applications

A Silicon Nitride Based Shallow Trench Isolation with Side-Gate for CMOS Integration with MEMS Components for System-On-Chip Applications

著者名:

掲載資料名:

Materials, integration and packaging issues for high-frequency devices

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

833

発行年:

2004

開始ページ:

235

終了ページ:

242

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997813 [1558997814]

言語:

英語

請求記号:

M23500/833

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014487
シリーズID:	PA00000011
会議名:	Materials, integration and packaging issues for high-frequency devices ; MRS Fall Meeting
回次:	2nd ; 2004
会議開催地:	Boston, MA,USA
会議開催年:	2004.11.29-2004.12.03

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