Relationship of Basal Plane and Prismatic Stacking Faults in GaN to Low Temperature Photoluminescence Peaks at 〜3.4 eV and 〜3.2 eV | 東京工業大学附属図書館文献データベース

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Relationship of Basal Plane and Prismatic Stacking Faults in GaN to Low Temperature Photoluminescence Peaks at 〜3.4 eV and 〜3.2 eV

著者名:

Hartlieb, P. J.

さらに 6 件

掲載資料名:

GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

831

発行年:

2005

開始ページ:

721

終了ページ:

726

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997790 [1558997792]

言語:

英語

請求記号:

M23500/831

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014485
シリーズID:	PA00000011
会議名:	Symposium on gan, ain, inn and their alloys
回次:	2004
会議開催地:	Boston, MA, USA
会議開催年:	2004.11.29-2004.12.03

類似資料:

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2 国際会議録 Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults Skromme, B.J., Chen, L., Mikhov, M.K., Yamane, H., Aoki, M., DiSalvo, F.J. Trans Tech Publications	8 国際会議録 Chemical, Electrical, and Structural Properties of Au/Pd Contacts on Chemical Vapor Cleaned p-type GaN Surfaces Hartlieb, P.J., Roskowski, A., Rodriguez, B.J., Nemanich, R.J., Davis, R.F. Materials Research Society
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