Fabrication of Silicon Nitride Film using Pure Nitrogen Plasma Generated near Atmospheric Pressure for III-V Semiconductor Fabrication
- 著者名:
Hayakawa, R. Yoshimura, T. Nakae, M. Uehara, T. Ashida, A. Fujimura, N. - 掲載資料名:
- GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 831
- 発行年:
- 2005
- 開始ページ:
- 671
- 終了ページ:
- 676
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997790 [1558997792]
- 言語:
- 英語
- 請求記号:
- M23500/831
- 資料種別:
- 国際会議録
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Materials Research Society |
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