Optimization of Growth and Activation of Highly Doped p-type GaN for Tunnel Junctions

Optimization of Growth and Activation of Highly Doped p-type GaN for Tunnel Junctions

著者名:

掲載資料名:

GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

831

発行年:

2005

開始ページ:

601

終了ページ:

606

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997790 [1558997792]

言語:

英語

請求記号:

M23500/831

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014485
シリーズID:	PA00000011
会議名:	Symposium on gan, ain, inn and their alloys
回次:	2004
会議開催地:	Boston, MA, USA
会議開催年:	2004.11.29-2004.12.03

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