Reduction of Threading Dislocations in GaN grown on 'c' plane sapphire by MOVPE

Reduction of Threading Dislocations in GaN grown on 'c' plane sapphire by MOVPE

著者名:

掲載資料名:

GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

831

発行年:

2005

開始ページ:

405

終了ページ:

410

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997790 [1558997792]

言語:

英語

請求記号:

M23500/831

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014485
シリーズID:	PA00000011
会議名:	Symposium on gan, ain, inn and their alloys
回次:	2004
会議開催地:	Boston, MA, USA
会議開催年:	2004.11.29-2004.12.03

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2 国際会議録 A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN Interlayer Cherns, Peter D., McAleese, Clifford, Barnard,Jonathan S., Kappers, Menno J., Humphreys, Colin J. Materials Research Society	8 国際会議録 Struetural and electrical properties of threading dislocations in GaN Elsner,J., Jones,R., Sitch,P.K., Frauenheim,Th., Heggie,M.I., Oberg,S., Briddon,P.R. Trans Tech Publications
3 国際会議録 Dislocation Distribution and Subgrain Structure of GaN Films Deposited on Sapphire by HVPE and MOVPE Dunn, K. A., Babcock, S. E., Vaudo, R., Phanse, V., Redwing, J. MRS - Materials Research Society	9 国際会議録 Reduction of Threading Dislocations and Residual Strain in GaN Grown by Molecular Beam Epitaxy Using RF-Plasma Nitrogen on Sapphire * Kishino, K., Kikuchi, A. Electrochemical Society
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