The intrinsic free carrier mobility in AlGaN/GaN quantum wells
- 著者名:
- 掲載資料名:
- GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 831
- 発行年:
- 2005
- 開始ページ:
- 399
- 終了ページ:
- 404
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997790 [1558997792]
- 言語:
- 英語
- 請求記号:
- M23500/831
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
MRS - Materials Research Society |
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SPIE-The International Society for Optical Engineering |
3
国際会議録
Effects of Piezoelectric Fields in GalnN/GaN and GaN/AlGaN Heterostructures and Quantum Wells
MRS - Materials Research Society |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
Society of Photo-optical Instrumentation Engineers |
MRS - Materials Research Society |
MRS - Materials Research Society |