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Discrete Steps in the Capacitance Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures

著者名:
Xia, Y.
Williams, E.
Park, Y.
Yilmaz, I.
Shah, J. M.
Schubert, E. F.
Wetzel, C.
さらに 2 件
掲載資料名:
GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
831
発行年:
2005
開始ページ:
233
終了ページ:
238
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997790 [1558997792]
言語:
英語
請求記号:
M23500/831
資料種別:
国際会議録

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