Excess Carrier Lifetime Measurements for GaN on Sapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity Decay Method

Excess Carrier Lifetime Measurements for GaN on Sapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity Decay Method

著者名:

掲載資料名:

GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

831

発行年:

2005

開始ページ:

107

終了ページ:

112

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997790 [1558997792]

言語:

英語

請求記号:

M23500/831

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014485
シリーズID:	PA00000011
会議名:	Symposium on gan, ain, inn and their alloys
回次:	2004
会議開催地:	Boston, MA, USA
会議開催年:	2004.11.29-2004.12.03

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