Effect of the Bottom Electrode Contact (BEC) on the Phase Transformation of N2 doped Ge2Sb2Te5(NGST) in a Phase-Change Random Access Memory | 東京工業大学附属図書館文献データベース

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Effect of the Bottom Electrode Contact (BEC) on the Phase Transformation of N2 doped Ge2Sb2Te5(NGST) in a Phase-Change Random Access Memory

著者名:

さらに 13 件

掲載資料名:

Materials and processes for nonvolatile memories : symposium held November 30-December 2, 2004, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

830

発行年:

2005

開始ページ:

373

終了ページ:

378

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997783 [1558997784]

言語:

英語

請求記号:

M23500/830

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014484
シリーズID:	PA00000011
会議名:	Symposium on materials and processes for nonvolatile memories
回次:	2004
会議開催地:	Boston, MA, USA
会議開催年:	2004.11.30-2004.12.02

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