Blank Cover Image

Ferroelectric 1-T Memory Device -- Will it be Viable for Nonvolatile Memory Application?

著者名:
Han, Jin-Ping  
掲載資料名:
Materials and processes for nonvolatile memories : symposium held November 30-December 2, 2004, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
830
発行年:
2005
開始ページ:
95
終了ページ:
106
総ページ数:
12
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997783 [1558997784]
言語:
英語
請求記号:
M23500/830
資料種別:
国際会議録

類似資料:

1 国際会議録 Microstructure and Physical Properties of Ferroelectric-gate Memory Capacitors with Various Buffer Layers

Caragianis-Broadbridge, Christine, Han, Jin-ping, Ma, T.P., Lehma, Ann Hein, Zhu, Wenjuan, Luo, Zhijiong, Pechkis, …

Materials Research Society
7 国際会議録 Temperature Effects on Charge Transfer Mechanisms of nc-ITO Embedded ZrHfO High-k Nonvolatile Memory Devices

Chia-Han Yang, Yue Kuo, Chen-Han Lin, Way Kuo

Materials Research Society
2 国際会議録 Thermal behavior and kinetic investigation of Bi, La, and Ti MOCVD precursors for application in nonvolatile ferroelectric memories

Bedoya, C., Condoretti, G. G., Finocchiaro, S. T., Di Maura, A., Atanasio, D., Fragala, I. L., Cattaneo, L., Carella, S.

Electrochemical Society
8 国際会議録 Reliability of nc-ZnO Embedded ZrHfO High-k Nonvolatile Memory Devices Stressed at High Temperatures

Yue Kuo, Chia-Han Yang, Chen-Han Lin, Way Kuo

Materials Research Society
3 国際会議録 Formation of Ge Nanocrystals in Lu₂O₁EHigh-k Dielectric and Its Application in Nonvolatile Memory Device

Materiaeditors, Tingkai Li ... [et al.] ls Research Society
9 国際会議録 Characterization of nanotube nonvolatile memory device

J.-W. Kang

Society of Photo-optical Instrumentation Engineers
4 国際会議録 MATERIALS CHARACTERIZATION OF NONDESTRUCTIVE READOUT NONVOLATILE MEMORY DEVICES

Tuttle, Bruce A., McIntyre, Dale C., Seager, Carleton H., Garino, Terry J., Warren, William L., Evans, Joseph T., …

MRS - Materials Research Society
10 国際会議録 Application of bi-layer resist on 70 nm node memory devices

Yool Kang, Jin Hong, Shi-Yong Lee, Hyung-Rae Lee, Man-Hyoung Ryoo, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

SPIE - The International Society of Optical Engineering
5 国際会議録 Atomic Layer Deposition of Al2O3/NiO/Al2O3 Laminate Structures for Nonvolatile Memory Device Applications

W. Cho, S. Lee, T. Chung, Y. Lee, C. Kim

Electrochemical Society
11 国際会議録 Adsorption-Controlled Growth of Ferroelectric PbTiO3 and Bi4Ti3O12 Films for Nonvolatile Memory Applications by MBE

Theis, C. D., Yeh, J., Hawley, M. E., Brown, G. W., Schlom, D. G.

MRS - Materials Research Society
6 国際会議録 Way for LEEPL technology to succeed in memory device application

Kim, I.-S., Woo, S.-G., Cho, H.-K., Han, W.-S., Moon, J.-T.

SPIE - The International Society of Optical Engineering
12 国際会議録 Nonvolatile Memory Characteristics of Nanocrystalline Molybdenum Oxide Embedded High-k Film - Device Performance and Light Wavelength Effects

Yue Kuo, Xi Liu, Chia-Han Yang, Chi-Chou Lin

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12