Charge Coupled Cyclotron Motion of Electrons and Holes in InGaAsN Epitaxial Layers

Charge Coupled Cyclotron Motion of Electrons and Holes in InGaAsN Epitaxial Layers

著者名:

Porteanu, H. E.

掲載資料名:

Progress in compound semiconductor materials -- electronic and optoelectronic applications

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

829

発行年:

2004

開始ページ:

511

終了ページ:

516

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997776 [1558997776]

言語:

英語

請求記号:

M23500/829

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014483
シリーズID:	PA00000011
会議名:	MRS Fall Meeting
回次:	2004
会議開催地:	Boston, MA,USA
会議開催年:	2004.11.29-2004.12.03

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