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The Er3+ and Yb3+-related emission from Er,Yb co-implanted Al0.70Ga0.30As/GaAs prepared MOCVD method

著者名:
掲載資料名:
Progress in compound semiconductor materials -- electronic and optoelectronic applications
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
829
発行年:
2004
開始ページ:
123
終了ページ:
126
総ページ数:
4
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997776 [1558997776]
言語:
英語
請求記号:
M23500/829
資料種別:
国際会議録

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