The Microstructure of GaN Nucleation Layers Grown by MOCVD on (1120)Sapphire Versus Pressure and Temperature

The Microstructure of GaN Nucleation Layers Grown by MOCVD on (1120)Sapphire Versus Pressure and Temperature

著者名:

Wojtowicz, T.

掲載資料名:

GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

798

発行年:

2004

開始ページ:

771

終了ページ:

774

総ページ数:

4

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997363 [1558997369]

言語:

英語

請求記号:

M23500/798

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014470
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	2003
会議開催地:	Boston, MA, USA
会議開催年:	2003.12.01-2003.12.05

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1 国際会議録 Effect of Growth Temperature on the Microstructure of the Nucleation Layers of GaN Grown by MOCVD on (1120) Sapphire Wojtowicz, T., Ruterana, P., Twigg, M.E., Henry, R.L., Koleske, D.D., Wickenden, A.E. Materials Research Society	7 国際会議録 Autocompensated surface structure of GaN film on sapphire Sung, M.M., Ahn, J., Bykov, V., Koleske, D.D., Wickenden, A.E., Rabalais, J.W. American Chemical Society
2 国際会議録 Microstructure of GaN Grown on (1120) Sapphire Ruterana, P., Wickenden, A. E., Twigg, M. E., Koleske, D. D., Henry, R. L., Tottereau, O. Materials Research Society	8 国際会議録 GaN decomposition in ammonia Koleske, D. D., Wickenden, A. E., Henry, R. L. MRS-Materials Research Society
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