Reduction of Dark Current in AlGaN/GaN Schottky Barrier Photodetectors With a Low-Temperature-Grown GaN Cap Layer

Reduction of Dark Current in AlGaN/GaN Schottky Barrier Photodetectors With a Low-Temperature-Grown GaN Cap Layer

著者名:

Chi, G.C.

掲載資料名:

GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

798

発行年:

2004

開始ページ:

353

終了ページ:

358

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997363 [1558997369]

言語:

英語

請求記号:

M23500/798

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014470
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	2003
会議開催地:	Boston, MA, USA
会議開催年:	2003.12.01-2003.12.05

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