High Electron Mobility In AlGaN/GaN HEMT Grown on Sapphire: Strain Modification by Means of AlN Interlayers | 東京工業大学附属図書館文献データベース

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High Electron Mobility In AlGaN/GaN HEMT Grown on Sapphire: Strain Modification by Means of AlN Interlayers

著者名:

Germain, Marianne

Boeykens, Steven

Degroote, Stefan

Schreurs, Dominique

Ruythooren, Wouter

Choi, Kang-Hoon

Van Daele, Benny

Van Tendeloo, Gustaaf

Borghs, Gustaaf

さらに 6 件

掲載資料名:

GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

798

発行年:

2004

開始ページ:

341

終了ページ:

346

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997363 [1558997369]

言語:

英語

請求記号:

M23500/798

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014470
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	2003
会議開催地:	Boston, MA, USA
会議開催年:	2003.12.01-2003.12.05

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1 国際会議録 Growth, Processing and Characterization of GaN/AlGaN/SiC Vertical n-p Diodes Boeykens, Steven, Leys, Maarten, Germain, Marianne, Poortmans, Jef, Daele, Benny Van, Tendeloo, Staf Van, Belmans, … Materials Research Society	7 国際会議録 TEM Characrericzation of Structual Defects Van Tendeloo Gustaaf Plenum Press
2 国際会議録 Surface Stabilization for higher performance AlGaN/GaN HEMT with in-situ MOVPE SiN Germain, M., Leys, M., Derluyn, J., Boeykens, S., Degroote, S., Ruythooren, W., Das, J., Vandersmissen, R., Xiao, D. P., … Materials Research Society	8 国際会議録 Low Temperature Direct Cu-Cu Immersion Bonding for 3D Integration Rahul Agarwal, Wouter Ruythooren Materials Research Society
3 国際会議録 Comparison of the Effect of Gate Dielectric Layer on 2DEG Carrier Concentration in Strained AlGaN/GaN Heterostructure Wang, W., Derluyn, J., Germain, M., Dewolf, I., Leys, M., Boeykens, S., Degroote, S., Ruythooren, W., Das, J., Schreurs, … Materials Research Society	9 国際会議録 AlGaN/GaN Piezoelectric HEMT's with Submicron Gates on Sapphire Chu, K., Smart, J.A., Shealy, J.R., Eastman, L. Electrochemical Society
4 国際会議録 Flip-Chip Mounting for Improved Thermal Management of AlGaN/GaN HFETs Ji, Hangfeng, Sarua, Andrei, Kuball, Martin, Das, Jo, Ruythooren, Wouter, Germain, Marianne, Borghs, Gustaaf Materials Research Society	10 国際会議録 The intrinsic free carrier mobility in AlGaN/GaN quantum wells Carosella, F., Germain, M., Farvacque, J. L. Materials Research Society
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