'Recovery' Effect of Electron Induced Damage in 4H-SiC Schottky Diodes

'Recovery' Effect of Electron Induced Damage in 4H-SiC Schottky Diodes

著者名:

Castaldini, A.

掲載資料名:

Radiation effects and ion-beam processing of materials : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

792

発行年:

2004

開始ページ:

611

終了ページ:

616

総ページ数:

6

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558997301 [155899730X]

言語:

英語

請求記号:

M23500/792

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014464
シリーズID:	PA00000011
会議名:	Symposium on radiation effects and ion-beam processing of materials
回次:	2003
会議開催地:	Boston, MA, USA
会議開催年:	2003.12.01-2003.12.05

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2 国際会議録 Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes Nava, F., Vanni, P., Verzellesi, G., Castaldini, A., Cavallini, A., Polenta, L., Nipoti, R., Donolato, C. Trans Tech Publications	8 国際会議録 Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers Le Donne, A., Binetti, S., Acciarri, M., Castaldini, A., Nava, F., Cavallini, A., Pizzini, S. Trans Tech Publications
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