Ge Nanocrystal Formed Directly by High-Dose-Ion-Implantation and the Related UV-VIS Photoluminescence

Ge Nanocrystal Formed Directly by High-Dose-Ion-Implantation and the Related UV-VIS Photoluminescence

著者名:

Zeng, Yingqiu

掲載資料名:

Radiation effects and ion-beam processing of materials : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

792

発行年:

2004

開始ページ:

195

終了ページ:

200

総ページ数:

6

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558997301 [155899730X]

言語:

英語

請求記号:

M23500/792

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014464
シリーズID:	PA00000011
会議名:	Symposium on radiation effects and ion-beam processing of materials
回次:	2003
会議開催地:	Boston, MA, USA
会議開催年:	2003.12.01-2003.12.05

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