Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001)

Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001)

著者名:

掲載資料名:

Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

815

発行年:

2004

開始ページ:

217

終了ページ:

222

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997653 [1558997652]

言語:

英語

請求記号:

M23500/815

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014457
シリーズID:	PA00000011
会議名:	Symposium on Silicon carbide
回次:	2004
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.14-2004.04.15

類似資料:

1 国際会議録 Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20) Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications	7 国際会議録 High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications
2 国際会議録 Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20) Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications	8 国際会議録 Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes Negoro, Y., Kimoto, T., Matsunami, H., Pensl, G. Trans Tech Publications
3 国際会議録 Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap Negoro, Y., Katsumoto, K., Kimoto, T., Matsunami, H. Trans Tech Publications	9 国際会議録 Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face Negoro, Y., Katsumoto, K., Kimoto, T., Matsunami, H., Schmid, F., Pensl, G. Trans Tech Publications
4 国際会議録 Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing Negoro, Y., Kimoto, T., Matsunami, H. Trans Tech Publications	10 国際会議録 Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates Chen, Y., Kimoto, T., Takeuchi, Y., Matsunami, H. Trans Tech Publications
5 国際会議録 Technological Aspects of Ion Implantation in SiC Device Processes Negoro, Y., Kimoto, T., Matsunami, H. Trans Tech Publications	11 国際会議録 Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates Chen, Y., Kimoto, T., Takeuchi, Y., Matsunami, H. Trans Tech Publications
6 国際会議録 High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications	12 国際会議録 Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38) Kimoto, T., Hashimoto, K., Fujihira, K., Danno, K., Nakamura, S., Negoro, Y., Matsunami, H. Materials Research Society

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