MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation

MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation

著者名:

掲載資料名:

Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

815

発行年:

2004

開始ページ:

199

終了ページ:

204

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997653 [1558997652]

言語:

英語

請求記号:

M23500/815

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014457
シリーズID:	PA00000011
会議名:	Symposium on Silicon carbide
回次:	2004
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.14-2004.04.15

類似資料:

1 国際会議録 Improved Dielectric ind Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing Kimoto, T., Kawano, H., Noborio, M., Suda, J., Matsunami, H. Trans Tech Publications	7 国際会議録 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face M. Noborio, J. Suda, T. Kimoto Trans Tech Publications
2 国際会議録 Short-Channel Effects in 4H-SiC MOSFETs Noborio, M., Kanzaki, Y., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications	8 国際会議録 4H-SiC MOSFETs on (03-38) Face Hirao, T., Yano, H., Kimoto, T., Matsunami, H., Shiomi, H. Trans Tech Publications
3 国際会議録 High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces M. Noborio, J. Suda, T. Kimoto Trans Tech Publications	9 国際会議録 4H-SiC MOSFETs on (03-38) Face Hirao, T., Yano, H., Kimoto, T., Matsunami, H., Shiomi, H. Trans Tech Publications
4 国際会議録 High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient Kanzaki, Y., Kinbara, H., Kosugi, H., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications	10 国際会議録 Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation H. Saitoh, A. Seki, A. Manabe, T. Kimoto Trans Tech Publications
5 国際会議録 Interface States of SiO2/SiC on (11-20) and (0001) Si Faces Yano, H., Kimoto, T., Matsunami, H. Trans Tech Publications	11 国際会議録 Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20) Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications
6 国際会議録 MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation Yano, H., Kimoto, T., Matsunami, H., Bassler, M., Pensl, G. Trans Tech Publications	12 国際会議録 Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20) Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications

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