Homoepitaxial Growth and Characterization of Thick SiC Layers With a Reduced Micropipe Density

Homoepitaxial Growth and Characterization of Thick SiC Layers With a Reduced Micropipe Density

著者名:

Tsuchida, H.

掲載資料名:

Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

815

発行年:

2004

開始ページ:

35

終了ページ:

46

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997653 [1558997652]

言語:

英語

請求記号:

M23500/815

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014457
シリーズID:	PA00000011
会議名:	Symposium on Silicon carbide
回次:	2004
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.14-2004.04.15

類似資料:

1 国際会議録 Conditions for Micropipe Dissociation by 4H-SiC CVD Growth Kamata, I., Tsuchida, H., Jikimoto, T., Miyanagi, T., Izumi, K. Trans Tech Publications	7 国際会議録 LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications
2 国際会議録 Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations Kamata, I., Tsuchida, H., Jikimoto, T., Izumi, K. Trans Tech Publications	8 国際会議録 Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions Tsuchida, H., Kamata, I., Izumi, S., Tawara, T., Izumi, K. Trans Tech Publications
3 国際会議録 Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	9 国際会議録 A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes Kamata, I., Tsuchida, H., Jikimoto, T., Izumi, K. Trans Tech Publications
4 国際会議録 Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	10 国際会議録 A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes Kamata, I., Tsuchida, H., Jikimoto, T., Izumi, K. Trans Tech Publications
5 国際会議録 Growth of Thick 4H-SiC Epilayers in a Vertical Radiant-Heating Reactor Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Materials Research Society	11 国際会議録 Dependence of Micropipe Dissociation on Surface Orientation Kamata, I., Tsuchida, H., Izumi, S., Tawara, T., Izumi, K. Trans Tech Publications
6 国際会議録 4H-SiC Epitaxial Growth for High-Power Devices Tsuchida, H., Kamata, I., Jikimoto, T., Miyanagi, T., Izumi, K. Trans Tech Publications	12 国際会議録 Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers Tawara, T., Tsuchida, H., Izumi, S., Kamata, I., Izumi, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12