Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD

Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD

著者名:

Elshocht, S.Van

掲載資料名:

Integration of advanced micro- and nanoelectronic devices - critical issues and solutions : symposium held April 13-16, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

811

発行年:

2004

開始ページ:

163

終了ページ:

168

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997615 [155899761X]

言語:

英語

請求記号:

M23500/811

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014453
シリーズID:	PA00000011
会議名:	Symposium on integration of advanced micro- and nanoelectronic devices
回次:	2004
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.13-2004.04.16

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