Blank Cover Image

Enhanced Boron Diffusion in Amorphous Silicon

著者名:
Jacques, J.M.
Burbure, N.
Jones, K.S.
Law, M.E.
Robertson, L.S.
Downey, D.F.
Rubin, L.M.
Bennett, J.
Beebe, M.
Klimov, M.
さらに 5 件
掲載資料名:
Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
810
発行年:
2004
開始ページ:
443
終了ページ:
448
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997608 [1558997601]
言語:
英語
請求記号:
M23500/810
資料種別:
国際会議録

類似資料:

1 国際会議録 Effect Of Fluorine On The Diffusion Of Boron In Amorphous Silicon

Jacques, J.M., Robertson, L.S., Jones, K.S., Bennett, Joe, Rendon, Mike

Materials Research Society
7 国際会議録 Exploring Alternative Annealing Methods for Shallow Junction Formation in Ion Implanted Silicon

Jones, K.S., Banisaukis, H., Earles, S., Lindfors, C., Griglione, M., Law, M.E., Taiwar, S., Falk, S.W., Downey, D.F., …

Electrochemical Society
2 国際会議録 Room Temperature Boron Diffusion in Amorphous Silicon

Jeannette M. Jacques, Kevin S. Jones, Mark E. Law, Lance S. Robertson, Leonard M. Rubin, Enrico Napolitani

Materials Research Society
8 国際会議録 Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants

Liu, J., Jones, K. S., Downey, D. F., Mehta, S.

MRS - Materials Research Society
3 国際会議録 Electrical and Structural Characterization of Boron Implanted Silicon Following Laser Thermal Processing

Jones, K.S., Gable, K.A., Law, M.E., Robertson, L.S., Talwar, S.

Materials Research Society
9 国際会議録 Concentration Dependence of Boron-Interstitial Cluster (BIC) Formation in Silicon-on-Insulator (SOI)

Saavedra, A.F., Jones, K.S., Radic, L., Law, M.E., Chan, K.K.

Materials Research Society
4 国際会議録 The Effect Of Impurities On Diffusion And Activation Of Ion Implanted Boron In Silicon

Robertson, L.S., Brindos, R., Jones, K. S., Law, Mark E., Downey, D. F., Falk, S., Liu, J.

Materials Research Society
10 国際会議録 Boron Activation During Solid Phase Epitaxial Regrowth

Banisaukas, Heather Brye, Jones, K.S., Talwar, Somit, Falk, S., Downey, D.F.

Materials Research Society
5 国際会議録 BIC Formation and Boron Diffusion in Relaxed Si0.8Ge0.2

Crosby, R.T., Radic, L., Jones, K.S., Law, M.E., Thompson, P.E., Liu, J., Klimov, M., Craciun, V.

Materials Research Society
11 国際会議録 Study of Vacancy and Impurity Complexes in Si Solid-Phase Epitaxial Crystallization with Positron Annihilation Spectroscopy

Lindfors, C.D., Jones, K.S., Law, M.E., Downey, D.F., Murto, R.W.

Materials Research Society
6 国際会議録 Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation

Robertson, L. S., Warnes, P. N., Jones, K. S., Earles, S. K., Law, M. E., Downey, D. F., Falk, S., Liu, J.

Materials Research Society
12 国際会議録 Diffusion of gold in amorphous silicon

Frank,W., Gustin,W., Coffa,S., Poate,J.M., Jacobson,D.C.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12