Erbium-Silicided Source/Drain Junction Formation by Rapid Thermal Annealing Technique for Decananometer-Scale Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors

Erbium-Silicided Source/Drain Junction Formation by Rapid Thermal Annealing Technique for Decananometer-Scale Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors

著者名:

掲載資料名:

Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

810

発行年:

2004

開始ページ:

61

終了ページ:

68

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997608 [1558997601]

言語:

英語

請求記号:

M23500/810

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014452
シリーズID:	PA00000011
会議名:	Symposium on silicon front-end junction formation
回次:	2004
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.13-2004.04.15

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