Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD | 東京工業大学附属図書館文献データベース

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Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD

著者名:

Elshocht, S.Van

Steenbergen, J.Van

さらに 8 件

掲載資料名:

High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

809

発行年:

2004

開始ページ:

287

終了ページ:

292

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997592 [1558997598]

言語:

英語

請求記号:

M23500/809

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014451
シリーズID:	PA00000011
会議名:	Symposium on high-mobility group
回次:	4th
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.13-2004.04.15

類似資料:

1 国際会議録 Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD Elshocht, S.Van, Brijs, B., Caymax, M., Conard, T., Gendt, S.De, Kubicek, S., Meuris, M., Onsia, B., Richard, O., … Materials Research Society	7 国際会議録 Characterization of Atomic-Beam Deposited GeO₁₋xNx/HfO₂ Stacks on Ge M. Houssa, T. Conard, J. Van Steenbergen, G. Mavrou, Y. Panayiotatos, T. Dimaulas, M. Meuris, M. Caymax, M. Heyns, G. … Electrochemical Society
2 国際会議録 Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon Elshocht, S.Van, Caymax, M., Gendt, S.De, Conard, T., Petry, J., Claes, M., Witters, T., Zhao, C., Brijs, B., Richard, … Materials Research Society	8 国際会議録 Thermal Stability of High-k Layers Zhao, C., Cosnier, V., Chen, P.J., Richard, O., Roebben, G., Maes, J., Elshocht, S.Van, Bender, H., Young, E., Biest, … Materials Research Society
3 国際会議録 High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies Caymax, Matty, Bender, H., Brijs, B., Conard, T., Gendt, S. De, Delabie, A., Heyns, M., Onsia, B., Ragnarsson, L., … Materials Research Society	9 国際会議録 Growth Studies and Reaction Mechanism of the Atomic Layer Deposition of Hafnium Oxide A. Debbie, M. Caymax, S. Brijs, D. Brunco, T. Conard, E. Sleeckx, L. Ragnarsson, S. Van Elshocht, S. De Gendt, M. Heyns Electrochemical Society
4 国際会議録 Physcial Characterization of Ultrathin High-k Dielectrics Vandervorst, W., Brijs, B., Bender, H., Conard, O.T., Petry, J., Richard, O., Elshocht, S.Van, Delabie, A., Caymax, M., … Materials Research Society	10 国際会議録 (10.2) 1:45 -2:15 PM - GermaniumDeep-sub micron PMOS Transistors with Etched TaN Metal Gate on a High-K Dielectric, Fabricated in a 200mm Prototyping Line … De Jaeger, M. Meuris B., Kubicek, S., Verheyena, P., Van Steenbergen, J., Lujan, G., Kunnen, E., Sleeckx, E., Teerlinck, … Electrochemical Society
5 国際会議録 ALD HfO2 Surface Preparation Study Delabie, Annelies, Caymax, M., Maes, J.W., Bajolet, P., Brijs, B., Cartier, E., Conard, T., Gendt, S.De, Richard, O., … Materials Research Society	11 国際会議録 Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications Kaushik, V., De Gendt, S., Caymax, M., Young, E., Rohr, E., Van Elshocht, S., Delabie, A., Claes, M., Shi, X., Chen, I., … Electrochemical Society
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