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Atomically Controlled Impurity Doping in Si-Based CVD Epitaxial Growth

著者名:
掲載資料名:
High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
809
発行年:
2004
開始ページ:
201
終了ページ:
212
総ページ数:
12
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997592 [1558997598]
言語:
英語
請求記号:
M23500/809
資料種別:
国際会議録

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