SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge-Condensation Technique for High-Mobility Channel CMOS Devices | 東京工業大学附属図書館文献データベース

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SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge-Condensation Technique for High-Mobility Channel CMOS Devices

著者名:

Tezuka, Tsutomu

Mizuno, Tomohisa

Sugiyama, Naoharu

Moriyama, Yoshihiko

Numata, Toshinori

Hirashita, Norio

Takagi, Shin-ichi

Miyamura, Yoshiji

さらに 7 件

掲載資料名:

High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

809

発行年:

2004

開始ページ:

65

終了ページ:

76

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997592 [1558997598]

言語:

英語

請求記号:

M23500/809

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014451
シリーズID:	PA00000011
会議名:	Symposium on high-mobility group
回次:	4th
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.13-2004.04.15

類似資料:

1 国際会議録 Strain Relaxation of Strained-Si Layers on SiGe-on-Insulator (SGOI) Structures After Mesa Isolation Usuda, Koji, Mizuno, Tomohisa, Tezuka, Tsutomu, Sugiyama, Naoharu, Moriyama, Yoshihiko, Nakaharai, Shu, Takagi, … Materials Research Society	7 国際会議録 Ge Condensation Technologies for Advanced MOSFETs on SGOI and GOI Substrates N. Sugiyama, T. Tezuka, T. Irisawa, K. Usuda, Y. Moriyama Electrochemical Society
2 国際会議録 (3.1) 3:20 - 3:50 PM - Strained-Si/SiGe-on-Insulator CMOS Technology as a Platform of Device Performance Boosters (Invited) Takagi, S., Mizuno, T., Tezuka, T, Sugiyama, N., Numata, T., Usuda, K., Moriyama, Y., Nakaharai, S., Koga, J., Tanabe, … Electrochemical Society	8 国際会議録 (11.2) 3:40 - 4:00 PM - Formation Mechanism of Ge-on-lnsulator Layers by Ge-condensation Technique Nakaharai, S., Tezuka, T., Sugiyama, N., Takagi, S. (MIRAI ASET) Electrochemical Society
3 国際会議録 Structure and Characteristics of Strained-Si-On-Insulator (Strained-SOI) MOSFETs Takagi, Shin-ichi, Tezuka, Tsutomu, Sugiyama, Naoharu, Mizuno, Tomohisa, Kurobe, Atsushi Materials Research Society	9 国際会議録 (13.0) 8:00 - 8:10AM- Welcome (13.1) 8:10 - 8:30 AM - Effect of Growth Temperature on Lattice Relaxation during SiGe Growth on Si Substrates Moriyama, Y., Sugiyama, N., Hirashita, N., Nakaharai, S., Takagi, S. (MIRAI-ASET) Electrochemical Society
4 国際会議録 High Performance Strained-SOI CMOSFETs* Takagi, S.-I., Mizuno, T., Tezuka, T., Sugiyania, N., Numata, T., Usuda, K., Moriyama, Y., Nakaharai, S., Koga, J., … Electrochemical Society	10 国際会議録 Uniaxially Strained SGOI and SSOI Channels for High Performance Multi-Gate CMOS T. Irisawa, T. Numata, T. Tezuka, K. Usuda, N. Hirashita Electrochemical Society
5 国際会議録 High performance strained-SOl CMOSFETs Takagi, S-I., Mizuno, T., Tezuka, T., Sugiyama, N, Numata, T., Usuda, K., Monyama, Y., Nakaharai, S., Koga, J., Tanabe, … Electrochemical Society	11 国際会議録 Mobility-Enhanced Device Technologies Using SiGe/Ge MOS Channels S. Takagi, T. Irisawa, T. Tezuka, S. Nakaharai, T. Numata Electrochemical Society
6 国際会議録 Study of the Surface Cleaning of GOI and SGOI Substrates for Ge Epitaxial Growth Y. Moriyama, N. Hirashita, E. Toyoda, K. Usuda, S. Nakaharai Electrochemical Society	12 国際会議録 Uniaxially Strained Si/SiGe Wire-Channel Transistors T. Tezuka, T. Irisawa, E. Toyoda, N. Sugiyama, S. Takagi Electrochemical Society

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