(Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices | 東京工業大学附属図書館文献データベース

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(Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices

著者名:

Meunier-Beillard, P.

Vandervorst, W.

さらに 7 件

掲載資料名:

High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

809

発行年:

2004

開始ページ:

3

終了ページ:

14

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997592 [1558997598]

言語:

英語

請求記号:

M23500/809

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014451
シリーズID:	PA00000011
会議名:	Symposium on high-mobility group
回次:	4th
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.13-2004.04.15

類似資料:

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2 国際会議録 P+/N Junction Formation in Thin Strain Relaxed Buffer Strained Silicon Substrates: The Effect of the Junction Anneal Eneman, G., Simoen, E., Delhougne, R., Verheyen, P., Simons, V., Loo, R., Caymax, M., De Meyer, K., Vandervorst, W., … Electrochemical Society	8 国際会議録 Defect Engineering Considerations for Strained Silicon Substrates C. Claeys, G. Eneman, M. Scholz, R. Loo, P. Verheyen, K. De Meyer, E. R. Simoen Electrochemical Society
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