Nitrided Hafnium Silicate Film Formation by Sequential Process Using a Hot Wall Batch System and Its Application to MOS Transistor

Nitrided Hafnium Silicate Film Formation by Sequential Process Using a Hot Wall Batch System and Its Application to MOS Transistor

著者名:

Aoyama, Tomonori

Torii, Kazuyoshi

Mitsuhashi, Riichirou

掲載資料名:

Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

786

発行年:

2004

開始ページ:

273

終了ページ:

278

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997240 [1558997245]

言語:

英語

請求記号:

M23500/786

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014443
シリーズID:	PA00000011
会議名:	Symposium on fundamentals of novel oxide
回次:	2003
会議開催地:	Boston, MA, USA
会議開催年:	2003.12.01-2003.12.04

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