Ir Thin Films for PZT Capacitors Prepared by MOCVD Using a New Ir Precursor

Ir Thin Films for PZT Capacitors Prepared by MOCVD Using a New Ir Precursor

著者名:

掲載資料名:

Ferroelectric thin films XII : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

784

発行年:

2004

開始ページ:

269

終了ページ:

274

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997226 [1558997229]

言語:

英語

請求記号:

M23500/784

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014441
シリーズID:	PA00000011
会議名:	Symposium on ferroelectric thin films
回次:	12th
会議開催地:	Boston, MA, USA
会議開催年:	2003.12.01-2003.12.04

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2 国際会議録 Effects of Sputtered Ir and IrO2 Electrodes on the Properties of PZT Thin Films Deposited by MOCVD Shimizu, M., Fujisawa, H., Hyodo, S., Nakashima, S., Niu, H., Okino, H., Shiosaki, T. MRS - Materials Research Society	8 国際会議録 Observation of domain structure at initial growth state of PbTiO3 thin films grown by MOCVD Fujisawa, H., Shimizu, M., Niu, H., Honda, K., Ohtani, S. MRS-Materials Research Society
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