Endotaxial Growth Mechanisms of Sn Quantum Dots in Si Matrix

Endotaxial Growth Mechanisms of Sn Quantum Dots in Si Matrix

著者名:

Mock, P.

掲載資料名:

Optoelectronics of group-IV-based materials : symposium held April 21-24, 2003, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

770

発行年:

2003

開始ページ:

219

終了ページ:

224

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997073 [1558997075]

言語:

英語

請求記号:

M23500/770

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014428
シリーズID:	PA00000011
会議名:	Symposium on optoelectronics of group-IV-based materials
回次:	4th
会議開催地:	San Francisco, CA, USA
会議開催年:	2003.04.21-2003.04.24

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