Ultra-Shallow Junction Formation by Excimer Laser Annealing of Ultra-Low Energy B Implanted in Si

Ultra-Shallow Junction Formation by Excimer Laser Annealing of Ultra-Low Energy B Implanted in Si

著者名:

Fortunato, G.

掲載資料名:

CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

765

発行年:

2003

開始ページ:

243

終了ページ:

254

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997028 [1558997024]

言語:

英語

請求記号:

M23500/765

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014423
シリーズID:	PA00000011
会議名:	Symposium on CMOS front-end materials and process technology
回次:	2003
会議開催地:	San Francisco, CA, USA
会議開催年:	2003.04.22-2003.04.24

類似資料:

1 国際会議録 18 Excimer laser annealing: a solution for the future technology nodes? Privitera, V., La Magna, A., Mannino, G., Fortunato, G., Mariucci, L., Svensson, B. C. Electrochemical Society	7 国際会議録 Ultra-Shallow Junctions Formed by Co-Implantation and Sub-Melt Laser Annealing S. B. Felch, A. Falepin, S. Seven, E. Augendre, T. Noda, V. Parihar, F. Nouri, T. Hoffinann, B. Pawlak, P. Eyben, W. … Electrochemical Society
2 国際会議録 Ultra-Low Energy Boron Implants in Crystalline Silicon: Atomic Transport Properties and Electrical Activation Napolitani, E., Carnera, A., Privitera, V., Magna, A. La, Schroer, E., Priolo, F., Mannino, G., Moffatt, S. MRS - Materials Research Society	8 国際会議録 Ultra-Shallow N+P and P+N Junction Formation Using Low Energy High Dose As+ and BF2+ Implantation and Rapid Thermal Anneal Kal,S., Kasko,I., Ryssel,H. SPIE-The International Society for Optical Engineering, Narosa
3 国際会議録 Technology Computer Aided Design of Ultra-Shallow Junctions in Si Devices Formed by Laser Annealing Processes Magna, Antonino La, Alippi, Paola, Privitera, Vittorio, Fortunato, Guglielmo, Camalleri, Marco, Svensson, Bengt Materials Research Society	9 国際会議録 Ultra-Shallow Junction Formation by Low Energy Ion Implantation and Flash Lamp Annealing* Suguro, K., Ito, T., Itani, T., linuma, T. Electrochemical Society
4 国際会議録 Application of Excimer Laser Annealing in the Formation of Implanted Shallow Junctions Nanver, L.K., Goudena, E.J.G., Ren, Q.W., von de Berg, M., Mallee, R., Slabbekoorn, J. Electrochemical Society	10 国際会議録 Point-Defect Migration in Crystalline Silicon: Impurity Content, Surface and Stress Effects Coffa, S., Libertino, S., Magna, A. La, Privitera, V., Mannino, G., Priolo, F. MRS - Materials Research Society
5 国際会議録 Laser Annealing for Ultra-Shallow Junction Formation in Advanced CMOS Surdeanu, R., Ponomarev, Y.V., Cerutti, R., Pawlak, B.J., Nanver, L.K., Hoflijk, I., Stolk, P.A., Dachs, C.J.J., … Electrochemical Society	11 国際会議録 SHALLOW JUNCTION FORMATION ;IN As-IMPLANTED Si BY LOW-TEMPERATURE RAPID THERMAL ANNEALING El-Ghor, M. K., Pennycook, S. J., Zuhurm R. A. Materials Research Society
6 国際会議録 Silicon Nanowires Obtained by Low Temperature Plasma-based Chemical Vapor Deposition. R.A. Puglisi, G. Mannino, S. Scalese, A. La Magna, V. Privitera Materials Research Society	12 国際会議録 Fundamental Issues in Rapid Thermal Annealing (RTA), Spike RTA and Excimer Laser Annealing (ELA) for the Formation of Shallow p+/n Junctions Chong, Y.F., Pey, K.L., Wee, A.T.S., See, A., Tung, C.H., Lu, Y.F. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12